Datasheet4U Logo Datasheet4U.com

BB503

Build in Biasing Circuit MOS FET IC UHF/VHF RF Amplifier

BB503 Features

* Build in Biasing Circuit; To reduce using parts cost & PC board space. Low noise; NF = 1.8 dB typ. at f = 900 MHz High gain; PG = 22 dB typ. at f = 900 MHz Withstanding to ESD; Build in ESD absorbing diode. Withstand up to 200V at C=200pF, Rs=0 conditions.

BB503 Datasheet (64.66 KB)

Preview of BB503 PDF

Datasheet Details

Part number:

BB503

Manufacturer:

Hitachi

File Size:

64.66 KB

Description:

Build in biasing circuit mos fet ic uhf/vhf rf amplifier.

📁 Related Datasheet

BB501 Build in Biasing Circuit MOS FET IC UHF/VHF RF Amplifier (Hitachi)

BB501 Build in Biasing Circuit MOS FET IC UHF/VHF RF Amplifier (Hitachi)

BB501C Build in Biasing Circuit MOS FET IC UHF/VHF RF Amplifier (Hitachi)

BB501M Build in Biasing Circuit MOS FET IC UHF/VHF RF Amplifier (Hitachi)

BB502 Build in Biasing Circuit MOS FET IC UHF/VHF RF Amplifier (Hitachi)

BB502 Build in Biasing Circuit MOS FET IC UHF/VHF RF Amplifier (Hitachi)

BB502C Build in Biasing Circuit MOS FET IC UHF/VHF RF Amplifier (Hitachi)

BB502M Build in Biasing Circuit MOS FET IC UHF/VHF RF Amplifier (Hitachi)

BB503 Build in Biasing Circuit MOS FET IC UHF/VHF RF Amplifier (Hitachi)

BB503C Build in Biasing Circuit MOS FET IC UHF/VHF RF Amplifier (Hitachi)

TAGS

BB503 Build Biasing Circuit MOS FET UHF VHF Amplifier Hitachi

Image Gallery

BB503 Datasheet Preview Page 2 BB503 Datasheet Preview Page 3

BB503 Distributor