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BB501C

Build in Biasing Circuit MOS FET IC UHF/VHF RF Amplifier

BB501C Features

* Build in Biasing Circuit; To reduce using parts cost & PC board space.

* High gain; PG = 21.5 dB typ. at f = 900 MHz

* Low noise; NF = 1.85 dB typ. at f = 900 MHz

* Withstanding to ESD; Build in ESD absorbing diode. Withstand up to 200V at C=200pF, Rs=0 conditions.

BB501C Datasheet (71.00 KB)

Preview of BB501C PDF

Datasheet Details

Part number:

BB501C

Manufacturer:

Hitachi

File Size:

71.00 KB

Description:

Build in biasing circuit mos fet ic uhf/vhf rf amplifier.

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BB501C Build Biasing Circuit MOS FET UHF VHF Amplifier Hitachi

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