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BB502C Datasheet - Hitachi

BB502C Build in Biasing Circuit MOS FET IC UHF/VHF RF Amplifier

BB502C Features

* Build in Biasing Circuit; To reduce using parts cost & PC board space. Low noise; NF = 1.6 dB typ. at f = 900 MHz High gain; PG = 22 dB typ. at f = 900 MHz Withstanding to ESD; Build in ESD absorbing diode. Withstand up to 200V at C=200pF, Rs=0 conditions.

BB502C_HitachiSemiconductor.pdf

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Datasheet Details

Part number:

BB502C

Manufacturer:

Hitachi

File Size:

64.94 KB

Description:

Build in biasing circuit mos fet ic uhf/vhf rf amplifier.

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BB502C BB502C Build Biasing Circuit MOS FET UHF VHF Amplifier Hitachi

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