BB506M Datasheet - Renesas Technology

BB506M Built in Biasing Circuit MOS FET IC UHF RF Amplifier

BB506M Features

* Built in Biasing Circuit; To reduce using parts cost & PC board space.

* High gain www.DataSheet4U.com PG = 24 dB typ. (f = 900 MHz)

* Low noise NF = 1.4 dB typ. (f = 900 MHz)

* Low output capacitance Coss = 1.1 pF typ. (f = 1 MHz)

* Provide mini mold packag

Datasheet Details

BB506M

165.18 KB

Built in biasing circuit mos fet ic uhf rf amplifier.

📁 Related Datasheet

BB506C Built in Biasing Circuit MOS FET IC UHF RF Amplifier (Renesas Technology)

BB501 Build in Biasing Circuit MOS FET IC UHF/VHF RF Amplifier (Hitachi)

BB501C Build in Biasing Circuit MOS FET IC UHF/VHF RF Amplifier (Hitachi)

BB501M Build in Biasing Circuit MOS FET IC UHF/VHF RF Amplifier (Hitachi)

BB502 Build in Biasing Circuit MOS FET IC UHF/VHF RF Amplifier (Hitachi)

BB502C Build in Biasing Circuit MOS FET IC UHF/VHF RF Amplifier (Hitachi)

TAGS

BB506M Distributor