BB506M Built in Biasing Circuit MOS FET IC UHF RF Amplifier

Renesas Technology

Description

BB506M Built in Biasing Circuit MOS FET IC UHF RF Amplifier REJ03G1604-0100 Rev.1.00 Nov 26, 2007 .

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Datasheet Specifications

Part number: BB506M
Manufacturer: Renesas ↗ Technology
File Size: 165.18 KB
Datasheet: BB506M_RenesasTechnology.pdf
Description: Built in Biasing Circuit MOS FET IC UHF RF Amplifier

Features

* Built in Biasing Circuit; To reduce using parts cost & PC board space.
* High gain www. DataSheet4U. com PG = 24 dB typ. (f = 900 MHz)
* Low noise NF = 1.4 dB typ. (f = 900 MHz)
* Low output capacitance Coss = 1.1 pF typ. (f = 1 MHz)
* Provide mini mold packag

Applications

* such as the development of weapons of mass destruction or for the purpose of any other military use. When exporting the products or technology described herein, you should follow the applicable export control laws and regulations, and procedures required by such laws and regulations. 4. All informat

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BB506M Built Biasing Circuit MOS FET UHF Amplifier Renesas Technology

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