BB501M Build in Biasing Circuit MOS FET IC UHF/VHF RF Amplifier

Hitachi

Description

BB501M Build in Biasing Circuit MOS FET IC UHF RF Amplifier ADE-208-700C (Z) 4th.Edition Nov.1998 .

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Datasheet Specifications

Part number: BB501M
Manufacturer: Hitachi
File Size: 71.05 KB
Datasheet: BB501M_HitachiSemiconductor.pdf
Description: Build in Biasing Circuit MOS FET IC UHF/VHF RF Amplifier

Features

* Build in Biasing Circuit; To reduce using parts cost & PC board space.
* High gain; PG = 21.5 dB typ. at f = 900 MHz
* Low noise; NF = 1.85 dB typ. at f = 900 MHz
* Withstanding to ESD; Build in ESD absorbing diode. Withstand up to 200V at C=200pF, Rs=0 conditions.

BB501M Distributors

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BB501M Build Biasing Circuit MOS FET UHF VHF Amplifier Hitachi

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