Part number:
BB501M
Manufacturer:
Hitachi
File Size:
71.05 KB
Description:
Build in biasing circuit mos fet ic uhf/vhf rf amplifier.
* Build in Biasing Circuit; To reduce using parts cost & PC board space.
* High gain; PG = 21.5 dB typ. at f = 900 MHz
* Low noise; NF = 1.85 dB typ. at f = 900 MHz
* Withstanding to ESD; Build in ESD absorbing diode. Withstand up to 200V at C=200pF, Rs=0 conditions.
BB501M
Hitachi
71.05 KB
Build in biasing circuit mos fet ic uhf/vhf rf amplifier.
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