BB502M Datasheet PDF (Build in Biasing Circuit MOS FET IC UHF/VHF RF Amplifier)

BB502M - Build in Biasing Circuit MOS FET IC UHF/VHF RF Amplifier

Features

Build in Biasing Circuit; To reduce using parts cost & PC board space. Low noise; NF = 1.6 dB typ. at f = 900 MHz High gain; PG = 22 dB typ. at f = 900 MHz Withstanding to ESD; Build in ESD absorbing diode. Withstand up to 200V at C=200pF, Rs=0 conditions.
Provide mini mold packages; MPAK-4(SOT-143mod) Outline MPAK-4 2 3 1 4 1. Source 2. Gate1 3. Gate2 4. Drain Notes: 1. 2. Marking is “BS.
”. BB502M is individual type number of HITAC.

Datasheet Details

Part number	BB502M
Manufacturer	Hitachi
File Size	65.02 KB
Description	Build in Biasing Circuit MOS FET IC UHF/VHF RF Amplifier
Datasheet	BB502M Datasheet
Additional preview pages of the BB502M datasheet.

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Full PDF Text Transcription

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BB502M Build in Biasing Circuit MOS FET IC UHF RF Amplifier ADE-208-809B(Z) 3rd. Edition Jun. 1999 Features • • • • Build in Biasing Circuit; To reduce using parts cost & PC board space. Low noise; NF = 1.6 dB typ. at f = 900 MHz High gain; PG = 22 dB typ. at f = 900 MHz Withstanding to ESD; Build in ESD absorbing diode. Withstand up to 200V at C=200pF, Rs=0 conditions. • Provide mini mold packages; MPAK-4(SOT-143mod) Outline MPAK-4 2 3 1 4 1. Source 2. Gate1 3. Gate2 4. Drain Notes: 1. 2. Marking is “BS–”. BB502M is individual type number of HITACHI BBFET.

Published: Jun 3, 2005 |