Datasheet Specifications
- Part number
- BB502M
- Manufacturer
- Hitachi
- File Size
- 65.02 KB
- Datasheet
- BB502M_HitachiSemiconductor.pdf
- Description
- Build in Biasing Circuit MOS FET IC UHF/VHF RF Amplifier
Description
BB502M Build in Biasing Circuit MOS FET IC UHF RF Amplifier ADE-208-809B(Z) 3rd.Edition Jun.1999 .
Features
* Build in Biasing Circuit; To reduce using parts cost & PC board space. Low noise; NF = 1.6 dB typ. at f = 900 MHz High gain; PG = 22 dB typ. at f = 900 MHz Withstanding to ESD; Build in ESD absorbing diode. Withstand up to 200V at C=200pF, Rs=0 conditions.BB502M Distributors
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