BB504C Datasheet - Renesas Technology

BB504C Built in Biasing Circuit MOS FET IC VHF&UHF RF Amplifier

BB504C Features

* www.DataSheet4U.com

* Low

* Built in Biasing Circuit; To reduce using parts cost & PC board space. noise; NF = 1.0 dB typ. at f = 200 MHz, NF =1.75 dB typ. at f =900 MHz

* High gain; PG = 30 dB typ. at f = 200 MHz, PG = 22 dB typ. at f = 900 MHz

* Withstanding to ESD

Datasheet Details

BB504C

251.72 KB

Built in biasing circuit mos fet ic vhf&uhf rf amplifier.

📁 Related Datasheet

BB504C Build in Biasing Circuit MOS FET IC VHF&UHF RF Amplifier (Hitachi Semiconductor)

BB501 Build in Biasing Circuit MOS FET IC UHF/VHF RF Amplifier (Hitachi)

BB501C Build in Biasing Circuit MOS FET IC UHF/VHF RF Amplifier (Hitachi)

BB501M Build in Biasing Circuit MOS FET IC UHF/VHF RF Amplifier (Hitachi)

BB502 Build in Biasing Circuit MOS FET IC UHF/VHF RF Amplifier (Hitachi)

BB502C Build in Biasing Circuit MOS FET IC UHF/VHF RF Amplifier (Hitachi)

TAGS

BB504C Distributor