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BB503M Build in Biasing Circuit MOS FET IC UHF/VHF RF Amplifier

BB503M Description

BB503M Build in Biasing Circuit MOS FET IC UHF RF Amplifier ADE-208-811B(Z) 3rd.Edition Jul.1999 .

BB503M Features

* Build in Biasing Circuit; To reduce using parts cost & PC board space. Low noise; NF = 1.8 dB typ. at f = 900 MHz High gain; PG = 22 dB typ. at f = 900 MHz Withstanding to ESD; Build in ESD absorbing diode. Withstand up to 200V at C=200pF, Rs=0 conditions.

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Datasheet Details

Part number
BB503M
Manufacturer
Hitachi
File Size
64.75 KB
Datasheet
BB503M_HitachiSemiconductor.pdf
Description
Build in Biasing Circuit MOS FET IC UHF/VHF RF Amplifier

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📌 All Tags

Build Biasing Circuit MOS FET UHF VHF Amplifier Hitachi
Hitachi BB503M-like datasheet