Datasheet Details
Part number:
BB503M
Manufacturer:
Hitachi
File Size:
64.75 KB
Description:
Build in biasing circuit mos fet ic uhf/vhf rf amplifier.
BB503M_HitachiSemiconductor.pdf
BB503M_HitachiSemiconductor.pdf
Datasheet Details
Part number:
BB503M
Manufacturer:
Hitachi
File Size:
64.75 KB
Description:
Build in biasing circuit mos fet ic uhf/vhf rf amplifier.
BB503M Features
* Build in Biasing Circuit; To reduce using parts cost & PC board space. Low noise; NF = 1.8 dB typ. at f = 900 MHz High gain; PG = 22 dB typ. at f = 900 MHz Withstanding to ESD; Build in ESD absorbing diode. Withstand up to 200V at C=200pF, Rs=0 conditions.
BB503M Distributors
📁 Related Datasheet
📌 All Tags