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2SK2390 Silicon N-Channel MOS FET

2SK2390 Description

www.DataSheet4U.com 2SK2390 Silicon N-Channel MOS FET November 1996 Application High speed power switching .

2SK2390 Features

* Low on-resistance High speed switching Low drive current 4 V gate drive device can be driven from 5 V source Suitable for Switching regulator, DC-DC converter Avalanche ratings Outline TO-220CFM D G 12 3 1. Gate 2. Drain 3. Source S

2SK2390 Applications

* based on the examples described herein. 5. No license is granted by implication or otherwise under any patents or other rights of any third party or Hitachi, Ltd. 6. MEDICAL APPLICATIONS: Hitachi’s products are not authorized for use in MEDICAL APPLICATIONS without the written consent of the appropr

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Datasheet Details

Part number
2SK2390
Manufacturer
Hitachi Semiconductor
File Size
88.59 KB
Datasheet
2SK2390_HitachiSemiconductor.pdf
Description
Silicon N-Channel MOS FET

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📌 All Tags

Silicon N-Channel MOS FET Hitachi Semiconductor
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