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2SK2800 - Silicon N Channel MOS FET

Hitachi Semiconductor

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Datasheet Details

Part number	2SK2800
Manufacturer	Hitachi Semiconductor
File Size	52.19 KB
Description	Silicon N Channel MOS FET
Datasheet	2SK2800_HitachiSemiconductor.pdf

2SK2800 Product details

Features

Low on-resistance R DS(on) = 15 mΩ typ.
High speed switching.
Low drive current.
4V gate drive device can be driven from 5V source Outline TO.
220AB D G 1 2 S 3 1. Gate 2. Drain (Flange) 3. Source 2SK2800 Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body-drain diode reverse drain current Avalanche current Avalanche energy Channel dissipation Channel temperature Storage.

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Published: Mar 30, 2005 |