2SK2802 - Silicon N Channel MOS FET

Hitachi Semiconductor

Datasheet Details

Part number	2SK2802
Manufacturer	Hitachi Semiconductor
File Size	40.89 KB
Description	Silicon N Channel MOS FET
Datasheet	2SK2802_HitachiSemiconductor.pdf

Low on-resistance R DS(on) = 0. 2 Ω typ. (VGS = 4 V, I D = 100 mA).
2.5V gate drive devices.
Small package (MPAK) Outline MPAK 3 1 D 2 G 1. Source 2. Gate 3. Drain S 2SK2802 Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage Gate to source voltage Drain current Drain peak current Channel dissipation Channel temperature Storage temperature Note: 1. PW ≤ 10 µs, duty cycle ≤ 1 % Symbol VDSS VGSS ID I D(pulse) Pch Tch Tstg Note1 Note2 Ratings 30 ±1.

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Published: Mar 30, 2005 |