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2SK3082S N-Channel MOSFET

2SK3082S Description

2SK3082(L),2SK3082(S) Silicon N Channel MOS FET High Speed Power Switching ADE-208-637 (Z) 2nd.Edition May 1998 .

2SK3082S Features

* Low on-resistance RDS(on) = 0.055 Ω typ.
* High speed switching
* 4V gate drive device can be driven from 5V source Outline LDPAK 4 4 1 1 2 3 2 3 1. Gate 2. Drain 3. Source 4. Drain 2SK3082(L),2SK3082(S) Absolute Maximum Ratings (Ta = 25°C) Item Drain to source volta

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N-Channel MOSFET Hitachi Semiconductor
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