2SK3349 - N-Channel MOSFET

Hitachi Semiconductor

Datasheet Details

Part number	2SK3349
Manufacturer	Hitachi Semiconductor
File Size	39.35 KB
Description	N-Channel MOSFET
Datasheet	2SK3349_HitachiSemiconductor.pdf

Low on-resistance R DS = 2.8 Ω typ. (at VGS = 4 V , ID = 25 mA) R DS = 4.8 Ω typ. (at VGS = 2.5 V , I D = 10 mA).
2.5 V gate drive device.
Small package (SMPAK) Outline SMPAK 3 1 2 D G 1. Source 2. Gate 3. Drain S 2SK3349 Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body-drain diode reverse drain current Channel dissipation Channel temperature Storage temperature Note: Symbol VDSS VGSS I.

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Published: Mar 30, 2005 |