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H5N2005DL Silicon N Channel MOS FET High Speed Power Switching

H5N2005DL Description

To all our customers Regarding the change of names mentioned in the document, such as Hitachi Electric and Hitachi XX, to Renesas Technology Corp.Th.

H5N2005DL Features

* Low on-resistance www. DataSheet4U. com
* Low drive current
* High speed switching Outline DPAK-2 4 4 D 1 2 3 H5N2005DS G 1 2 3 H5N2005DL S 1. Gate 2. Drain 3. Source 4. Drain H5N2005DL, H5N2005DS Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage Gate

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Datasheet Details

Part number
H5N2005DL
Manufacturer
Hitachi Semiconductor
File Size
89.02 KB
Datasheet
H5N2005DL_HitachiSemiconductor.pdf
Description
Silicon N Channel MOS FET High Speed Power Switching

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