H5N2005DS, H5N2005DL Silicon N Channel MOS FET High Speed Power Switching

Hitachi Semiconductor

H5N2005DS Description

To all our customers Regarding the change of names mentioned in the document, such as Hitachi Electric and Hitachi XX, to Renesas Technology Corp.Th.

H5N2005DS Features

* Low on-resistance www. DataSheet4U. com
* Low drive current
* High speed switching Outline DPAK-2 4 4 D 1 2 3 H5N2005DS G 1 2 3 H5N2005DL S 1. Gate 2. Drain 3. Source 4. Drain H5N2005DL, H5N2005DS Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage Gate

📥 Download Datasheet

H5N2005DS Datasheet Preview — This datasheet PDF includes multiple part numbers: H5N2005DS, H5N2005DL. Please refer to the document for exact specifications by model.

Datasheet Details

Part number: H5N2005DS, H5N2005DL
Manufacturer: Hitachi Semiconductor
File Size: 89.02 KB
Datasheet: H5N2005DL_HitachiSemiconductor.pdf
Description: Silicon N Channel MOS FET High Speed Power Switching
Note: This datasheet PDF includes multiple part numbers: H5N2005DS, H5N2005DL.
Please refer to the document for exact specifications by model.

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H5N2004DL - Silicon N Channel MOS FET High Speed Power Switching (Renesas Technology)
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Silicon Channel MOS FET High Speed Power Switching Hitachi Semiconductor

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