HF166F
Hongfa Technology
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Miniature high power relay.
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HF161F - MINIATURE HIGH POWER RELAY
(Hongfa Technology)
42*+*2
7585-=>;1 4534 :9@1; ;16-A
Idg` Pj5A H8:;<8> 0?1
Idg` Pj5A ;77:8;87
Idg` Pj5A877797<7@;:
2EBOPMEN
V ;5
HF163F-L - SUBMINIATURE INTERMEDIATE POWER LATCHING RELAY
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> < 1 5 3 < . @ FH8A?B?7GHE; ?BG;EA;:?7G; DCJ;E @7G9>?B= E;@7L
|BE> .Hiu {lnoplr
:I; |BE> .Hiu okkntoqk
HF165F - Solar Relay
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><354<
FC@7E E;@7K
Q_h^cha
:I; Q_h^cha
HF165FD - MINIATURE HIGH POWER RELAY
(Hongfa Technology)
<:032:8
?=@=5EFC9 <=;< BAH9C C9>5J
Fad] Lg3? E689:6< 8G9
Fad] Lg3? 95598698
Fad] Lg3? COC6:557685>:;
:OLZ[XOY
~ 85A koal[`af_ [YhYZadalq ~ Bj]Yc\go.
HF165FD-G - MINIATURE HIGH POWER RELAY
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;9/2197-:
>:;
9MJXYVMW
} 95A jn`kZ_`e^ ZXgXY`c`kp } Bi\Xb[.
HF10-12F - NPN SILICON RF POWER TRANSISTOR
(Advanced Semiconductor)
HF10-12F
NPN SILICON RF POWER TRANSISTOR
DESCRIPTION:
The ASI HF10-12F is Designed for
PACKAGE STYLE .380 4L FLG
B .112 x 45° A
FEATURES:
• PG = 20.
HF10-12S - NPN SILICON RF POWER TRANSISTOR
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HF10-12S
NPN SILICON RF POWER TRANSISTOR
DESCRIPTION:
The ASI HF10-12S is Designed for
PACKAGE STYLE .380 4L STUD
.112x45° A
FEATURES:
• PG = 20 dB.
HF100-12 - NPN SILICON RF POWER TRANSISTOR
(Advanced Semiconductor)
HF100-12
NPN SILICON RF POWER TRANSISTOR
DESCRIPTION:
The ASI HF100-12 is Designed for
PACKAGE STYLE .500 4L FLG
.112x45° A FULL R Ø.125 NOM. L
FEA.
HF100-28 - NPN SILICON RF POWER TRANSISTOR
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HF100-28
NPN SILICON RF POWER TRANSISTOR
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The ASI HF100-28 is a class A silicon NPN planar transistor, designed for SSB munications. D.
HF1008 - Unshielded Surface Mount Inductors
(Delevan)
Inductors RF
TESTSFRCMRFUDAEMRMCXQRIAIUNRMEXEIEQUMNINSMMTUMCIUSMR(IYNMTOAA((IHMMTM(NmMIUHHNCASMzzGE)))) INDDUACSTOTHALNNEUCRMEABN(EnCRHE*)
SERIES
HF.
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