CS640A0H Datasheet (Huajing Microelectronics) - Silicon N-Channel Power MOSFET

CS640A0H, Silicon N-Channel Power MOSFET

CS640 A0H, the silicon N-channel Enhanced VDMOSFETs, is obtained by the self-aligned planar Technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy.

The transistor can be used in various power switching circuit for system miniaturization and

CS640A0H Features

* l Fast Switching l Low ON Resistance(Rdson≤0.18Ω) l Low Gate Charge (Typical Data:24nC) l Low Reverse transfer capacitances(Typical:25pF) l 100% Single Pulse avalanche energy Test Applications： CRT、TV/Monitor and Lighting. Absolute（Tc= 25℃ unless otherwise specified）： Symbol Parameter VDSS ID IDM