CS740A0H Datasheet - Huajing Microelectronics

CS740A0H Silicon N-Channel Power MOSFET

CS740 A0H, the silicon N-channel Enhanced VDMOSFETs, is obtained by the self-aligned planar Technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various power switching circuit for system miniaturization and.

CS740A0H Features

* l Fast Switching l Low ON Resistance(Rdson≤0.50Ω) l Low Gate Charge (Typical Data:28nC) l Low Reverse transfer capacitances(Typical:21pF) l 100% Single Pulse avalanche energy Test Applications： Power switch circuit of adaptor and charger. Absolute（Tc= 25℃ unless otherwise specified）： Symbol Param

CS740A0H-HuajingDiscreteDevices.pdf