CS150N03D8 Datasheet - Huajing

CS150N03D8, Silicon N-Channel Power MOSFET

Silicon N-Channel Power MOSFET ○R CS150N03 D8 General .
CS150N03 D8, the silicon N-channel Enhanced VDMOSFETs, is obtained by advanced Trench Technology which reduce the conduction loss, improve switching.

Applications

* Power switch circuit of adaptor and charger. Absolute（TJ= 25℃ unless otherwise specified）： Symbol Parameter VDSS ID IDMa1 VGS EAS a2 PD TJ，Tstg TL Drain-to-Source Voltage Continuous Drain Current TC = 25 °C Continuous Drain Current TC = 100 °C Pulsed Drain Current TC = 25 °C Gate-to-Source Volta

CS150N03D8-Huajing.pdf