H55S1G32MFP-A3, H55S1G32MFP-60 Datasheet - Hynix Semiconductor

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H55S1G32MFP-A3, H55S1G32MFP-60 1Gb (32Mx32bit) Mobile SDRAM

www.DataSheet4U.com 1GBit MOBILE SDR SDRAMs based on 8M x 4Bank x32 I/O Specification of 1Gb (32Mx32bit) Mobile SDRAM Memory Cell Array - Organized.
and is subject to change without notice.

H55S1G32MFP-60_HynixSemiconductor.pdf

H55S1G32MFP-A3 Datasheet Preview — This datasheet PDF includes multiple part numbers: H55S1G32MFP-A3, H55S1G32MFP-60. Please refer to the document for exact specifications by model.

Datasheet Details

Part number:

H55S1G32MFP-A3, H55S1G32MFP-60

Manufacturer:

Hynix Semiconductor

File Size:

969.91 KB

Description:

1Gb (32Mx32bit) Mobile SDRAM

Note:

This datasheet PDF includes multiple part numbers: H55S1G32MFP-A3, H55S1G32MFP-60.
Please refer to the document for exact specifications by model.

Features

* Standard SDRAM Protocol Clock Synchronization Operation - All the commands registered on positive edge of basic input clock (CLK) MULTIBANK OPERATION - Internal 4bank operation - During burst Read or Write operation, burst Read or Write for a different bank is performed. - During burst Read or Write

Applications

* which requires large memory density and high bandwidth. It is organized as 4banks of 8,398,608x32. Mobile SDRAM is a type of DRAM which operates in synchronization with input clock. The Hynix Mobile SDRAM latch each control signal at the rising edge of a basic input clock (CLK) and input/output data

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