H558 Datasheet - SHANTOU HUASHAN ELECTRONIC DEVICES

H558 NPN SILICON TRANSISTOR

PNP SILICON TRANSISTOR Shantou Huashan Electronic Devices Co.,Ltd. H558 ¨€ APPLICATIONS SWITCHING AND AMPLIFIER ¨€ ABSOLUTE MAXIMUM RATINGS£¨ Ta=25¡æ£© TO-92 T stg ¡ ª ¡ ªStorage Temperature¡-¡-¡-¡-¡-¡-¡-¡-¡-¡-55~150¡æ T j ¡ª¡ªJunction Temperature¡-¡-¡-¡-¡-¡-¡-¡-¡-¡-¡-¡-¡150¡æ www.DataSheet4U.com PC¡ª¡ªCollector Dissipation¡-¡-¡-¡-¡-¡-¡-¡-¡-¡-¡-¡-¡500mW VCBO ¡ª¡ª Collector-Base Voltage¡-¡-¡-¡-¡-¡-¡-¡-¡-¡-¡-¡-30V VCEO¡ ª ¡ ªCollector-Emitter Voltage¡-¡-¡-¡-¡-¡-¡-¡-¡-¡-¡-30V VE B O ¡ ª ¡ ªE.

H558 Datasheet (496.55 KB)

H558 Datasheet Preview — Preview of H558 PDF

Datasheet Details

Part number:

H558

Manufacturer:

SHANTOU HUASHAN ELECTRONIC DEVICES

File Size:

496.55 KB

Description:

Npn silicon transistor.

📁 Related Datasheet

H5551 NPN SILICON TRANSISTOR (SHANTOU HUASHAN ELECTRONIC DEVICES)

H556 PNP Silicon Transistor (Shantou Huashan Electronic)

H557 NPN SILICON TRANSISTOR (SHANTOU HUASHAN ELECTRONIC DEVICES)

H55S1222EFP-60E 128MBit MOBILE SDR SDRAMs based on 1M x 4Bank x32 I/O (Hynix Semiconductor)

H55S1222EFP-60M 128MBit MOBILE SDR SDRAMs based on 1M x 4Bank x32 I/O (Hynix Semiconductor)

H55S1222EFP-75E 128MBit MOBILE SDR SDRAMs based on 1M x 4Bank x32 I/O (Hynix Semiconductor)

H55S1222EFP-75M 128MBit MOBILE SDR SDRAMs based on 1M x 4Bank x32 I/O (Hynix Semiconductor)

H55S1222EFP-A3E 128MBit MOBILE SDR SDRAMs based on 1M x 4Bank x32 I/O (Hynix Semiconductor)

TAGS

H558 NPN SILICON TRANSISTOR SHANTOU HUASHAN ELECTRONIC DEVICES

H558 Distributor