and is subject to change without notice.
Hynix does not assume any responsibility for use of circuits described.
No patent licenses are implied.
Rev 1.0 / Jun.
2008 1 www.DataSheet4U.com 1128Mbit (4Mx32bit) Mobile SDR Memory H55S1222EFP Series Document Title 4Bank x 1M x 32bits Synchronous DRAM
H55S1222EFP-A3E Features
* Standard SDRAM Protocol Clock Synchronization Operation - All the commands registered on positive edge of basic input clock (CLK)
* MULTIBANK OPERATION - Internal 4bank operation - During burst Read or Write operation, burst Read or Write for a different bank is performed. - Duri
H55S1222EFP-60E_HynixSemiconductor.pdf
Datasheet Details
H55S1222EFP-A3E, H55S1222EFP-60E
Hynix Semiconductor
1.12 MB
128mbit mobile sdr sdrams based on 1m x 4bank x32 i/o.
This datasheet PDF includes multiple part numbers: H55S1222EFP-A3E, H55S1222EFP-60E.
Please refer to the document for exact specifications by model.
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