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H55S1222EFP-A3E, H55S1222EFP-60E Datasheet - Hynix Semiconductor

H55S1222EFP-A3E 128MBit MOBILE SDR SDRAMs based on 1M x 4Bank x32 I/O

and is subject to change without notice. Hynix does not assume any responsibility for use of circuits described. No patent licenses are implied. Rev 1.0 / Jun. 2008 1 www.DataSheet4U.com 1128Mbit (4Mx32bit) Mobile SDR Memory H55S1222EFP Series Document Title 4Bank x 1M x 32bits Synchronous DRAM .

H55S1222EFP-A3E Features

* Standard SDRAM Protocol Clock Synchronization Operation - All the commands registered on positive edge of basic input clock (CLK)

* MULTIBANK OPERATION - Internal 4bank operation - During burst Read or Write operation, burst Read or Write for a different bank is performed. - Duri

H55S1222EFP-60E_HynixSemiconductor.pdf

This datasheet PDF includes multiple part numbers: H55S1222EFP-A3E, H55S1222EFP-60E. Please refer to the document for exact specifications by model.
H55S1222EFP-A3E Datasheet Preview Page 2 H55S1222EFP-A3E Datasheet Preview Page 3

Datasheet Details

Part number:

H55S1222EFP-A3E, H55S1222EFP-60E

Manufacturer:

Hynix Semiconductor

File Size:

1.12 MB

Description:

128mbit mobile sdr sdrams based on 1m x 4bank x32 i/o.

Note:

This datasheet PDF includes multiple part numbers: H55S1222EFP-A3E, H55S1222EFP-60E.
Please refer to the document for exact specifications by model.

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TAGS

H55S1222EFP-A3E H55S1222EFP-60E 128MBit MOBILE SDR SDRAMs based 4Bank x32 Hynix Semiconductor

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