H5551 Datasheet - SHANTOU HUASHAN ELECTRONIC DEVICES

H5551 NPN SILICON TRANSISTOR

N P N S I L I C O N T RAN S I S T O R Shantou Huashan Electronic Devices Co.,Ltd. H5551 ¨€ AMPLIFIER TRANSISTOR Collector-Emitter Voltage:Vceo=160V. CollectorDissipation:Pc(max)=625mW ¨€ T stg ¡ ª Tj¡ª ABSOLUTE MAXIMUM RATINGS£¨ Storage Temperature¡ - ¡ Junction Temperature¡ - ¡ - ¡ - ¡ - ¡ Collector Dissipation¡- ¡Collector-Base Voltage¡-¡ Collector-Emitter Voltage¡-¡ Emitter-Base Voltage¡ Collector Current¡- ¡- ¡¡-¡-¡¡- ¡¡¡- ¡¡- ¡- ¡¡-¡¡-¡-¡¡- ¡¡-¡¡¡¡- ¡¡- ¡- ¡¡¡- ¡¡- Ta=25¡æ£© -55~150¡.

H5551_SHANTOUHUASHANELECTRONICDEVICES.pdf

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Datasheet Details

Part number:

H5551

Manufacturer:

SHANTOU HUASHAN ELECTRONIC DEVICES

File Size:

113.13 KB

Description:

Npn silicon transistor.

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H5551 H5551 NPN SILICON TRANSISTOR SHANTOU HUASHAN ELECTRONIC DEVICES

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