H5551 Datasheet - SHANTOU HUASHAN ELECTRONIC DEVICES

H5551 NPN SILICON TRANSISTOR

N P N S I L I C O N T RAN S I S T O R Shantou Huashan Electronic Devices Co.,Ltd. H5551 ¨€ AMPLIFIER TRANSISTOR Collector-Emitter Voltage:Vceo=160V. CollectorDissipation:Pc(max)=625mW ¨€ T stg ¡ ª Tj¡ª ABSOLUTE MAXIMUM RATINGS£¨ Storage Temperature¡ - ¡ Junction Temperature¡ - ¡ - ¡ - ¡ - ¡ Collector Dissipation¡- ¡Collector-Base Voltage¡-¡ Collector-Emitter Voltage¡-¡ Emitter-Base Voltage¡ Collector Current¡- ¡- ¡¡-¡-¡¡- ¡¡¡- ¡¡- ¡- ¡¡-¡¡-¡-¡¡- ¡¡-¡¡¡¡- ¡¡- ¡- ¡¡¡- ¡¡- Ta=25¡æ£© -55~150¡.

H5551 Datasheet (113.13 KB)

H5551 Datasheet Preview — Preview of H5551 PDF

Datasheet Details

Part number:

H5551

Manufacturer:

SHANTOU HUASHAN ELECTRONIC DEVICES

File Size:

113.13 KB

Description:

Npn silicon transistor.

📁 Related Datasheet

H556 PNP Silicon Transistor (Shantou Huashan Electronic)

H557 NPN SILICON TRANSISTOR (SHANTOU HUASHAN ELECTRONIC DEVICES)

H558 NPN SILICON TRANSISTOR (SHANTOU HUASHAN ELECTRONIC DEVICES)

H55S1222EFP-60E 128MBit MOBILE SDR SDRAMs based on 1M x 4Bank x32 I/O (Hynix Semiconductor)

H55S1222EFP-60M 128MBit MOBILE SDR SDRAMs based on 1M x 4Bank x32 I/O (Hynix Semiconductor)

H55S1222EFP-75E 128MBit MOBILE SDR SDRAMs based on 1M x 4Bank x32 I/O (Hynix Semiconductor)

H55S1222EFP-75M 128MBit MOBILE SDR SDRAMs based on 1M x 4Bank x32 I/O (Hynix Semiconductor)

H55S1222EFP-A3E 128MBit MOBILE SDR SDRAMs based on 1M x 4Bank x32 I/O (Hynix Semiconductor)

TAGS

H5551 NPN SILICON TRANSISTOR SHANTOU HUASHAN ELECTRONIC DEVICES

H5551 Distributor