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H5MS1G32MFP

1Gbit MOBILE DDR SDRAM

H5MS1G32MFP Features

* SUMMARY

* Mobile DDR SDRAM - Double data rate architecture: two data transfer per clock cycle

* Mobile DDR SDRAM INTERFACE - x32 bus width - Multiplexed Address (Row address and Column address)

* BURST LENGTH

* SUPPLY VOLTAGE - 1.8V device: VDD and VDDQ = 1.7V to 1.95V

* MEMORY C

H5MS1G32MFP General Description

and is subject to change without notice. Hynix does not assume any responsibility for use of circuits described. No patent licenses are implied. Rev 1.2 / Jun. 2008 1 www.DataSheet4U.net Mobile DDR SDRAM 1Gbit (32M x 32bit) H5MS1G22MFP Series / H5MS1G32MFP Series Document Title 1GBit (4Bank x 8M .

H5MS1G32MFP Datasheet (2.45 MB)

Preview of H5MS1G32MFP PDF

Datasheet Details

Part number:

H5MS1G32MFP

Manufacturer:

Hynix Semiconductor

File Size:

2.45 MB

Description:

1gbit mobile ddr sdram.
www.DataSheet4U.net 1Gbit MOBILE DDR SDRAM based on 8M x 4Bank x32 I/O Specification of 1Gb (32Mx32bit) Mobile DDR SDRAM Memory Cell Array - Organi.

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TAGS

H5MS1G32MFP 1Gbit MOBILE DDR SDRAM Hynix Semiconductor

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