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H5MS1222EFP

128Mbit MOBILE DDR SDRAM

H5MS1222EFP Features

* SUMMARY Mobile DDR SDRAM - Double data rate architecture: two data transfer per clock cycle Mobile DDR SDRAM INTERFACE - x32 bus width: HY5MS5B2ALFP - Multiplexed Address (Row address and Column address) BURST LENGTH SUPPLY VOLTAGE - 1.8V device: VDD and VDDQ = 1.7V to 1.95V MEMORY CELL ARRAY - 128M

H5MS1222EFP General Description

and is subject to change without notice. Hynix does not assume any responsibility for use of circuits described. No patent licenses are implied. Rev 1.0 / Jun. 2008 1 www.DataSheet4U.net Mobile DDR SDRAM 128Mbit (4M x 32bit) H5MS1222EFP Series Document Title 128MBit (4Bank x 1M x 32bits) MOBILE D.

H5MS1222EFP Datasheet (1.80 MB)

Preview of H5MS1222EFP PDF

Datasheet Details

Part number:

H5MS1222EFP

Manufacturer:

Hynix Semiconductor

File Size:

1.80 MB

Description:

128mbit mobile ddr sdram.
www.DataSheet4U.net 128Mbit MOBILE DDR SDRAM based on 1M x 4Bank x32 I/O Specification of 128M (4Mx32bit) Mobile DDR SDRAM Memory Cell Array - Orga.

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H5MS1222EFP 128Mbit MOBILE DDR SDRAM Hynix Semiconductor

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