Datasheet Specifications
- Part number
- H5MS1222EFP
- Manufacturer
- Hynix Semiconductor
- File Size
- 1.80 MB
- Datasheet
- H5MS1222EFP_HynixSemiconductor.pdf
- Description
- 128Mbit MOBILE DDR SDRAM
Description
www.DataSheet4U.net 128Mbit MOBILE DDR SDRAM based on 1M x 4Bank x32 I/O Specification of 128M (4Mx32bit) Mobile DDR SDRAM Memory Cell Array - Orga.
Features
* SUMMARY Mobile DDR SDRAM - Double data rate architecture: two data transfer per clock cycle Mobile DDR SDRAM INTERFACE - x32 bus width: HY5MS5B2ALFP - Multiplexed Address (Row address and Column address) BURST LENGTH SUPPLY VOLTAGE - 1.8V device: VDD and VDDQ = 1.7V to 1.95V MEMORY CELL ARRAY - 128MApplications
* which use the battery such as PDAs, 2.5G and 3G cellular phones with internet access and multimedia capabilities, mini-notebook, hand-held PCs. It is organized as 4banks of 1,048,576 x32. The HYNIX H5MS1222EFP series uses a double-data-rate architecture to achieve high-speed operation. The double daH5MS1222EFP Distributors
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