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H5MS1222EFP Datasheet - Hynix Semiconductor

H5MS1222EFP 128Mbit MOBILE DDR SDRAM

and is subject to change without notice. Hynix does not assume any responsibility for use of circuits described. No patent licenses are implied. Rev 1.0 / Jun. 2008 1 www.DataSheet4U.net Mobile DDR SDRAM 128Mbit (4M x 32bit) H5MS1222EFP Series Document Title 128MBit (4Bank x 1M x 32bits) MOBILE D.

H5MS1222EFP Features

* SUMMARY Mobile DDR SDRAM - Double data rate architecture: two data transfer per clock cycle Mobile DDR SDRAM INTERFACE - x32 bus width: HY5MS5B2ALFP - Multiplexed Address (Row address and Column address) BURST LENGTH SUPPLY VOLTAGE - 1.8V device: VDD and VDDQ = 1.7V to 1.95V MEMORY CELL ARRAY - 128M

H5MS1222EFP_HynixSemiconductor.pdf

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Datasheet Details

Part number:

H5MS1222EFP

Manufacturer:

Hynix Semiconductor

File Size:

1.80 MB

Description:

128mbit mobile ddr sdram.

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H5MS1222EFP H5MS1222EFP 128Mbit MOBILE DDR SDRAM Hynix Semiconductor

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