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H5MS5122DFR Datasheet - Hynix Semiconductor

Mobile DDR SDRAM 512Mbit

H5MS5122DFR Features

* SUMMARY

* Mobile DDR SDRAM - Double data rate architecture: two data transfer per clock cycle

* Mobile DDR SDRAM INTERFACE - x32 bus width - Multiplexed Address (Row address and Column address)

* BURST LENGTH

* SUPPLY VOLTAGE - 1.8V device: VDD and VDDQ = 1.7V to 1.95V

* MEMORY C

H5MS5122DFR General Description

and is subject to change without notice. Hynix does not assume any responsibility for use of circuits described. No patent licenses are implied. Rev 1.2 / Jul. 2008 1 www.DataSheet4U.net 11 Mobile DDR SDRAM 512Mbit (16M x 32bit) H5MS5122DFR Series / H5MS5132DFR Series Document Title 512MBit (4Ban.

H5MS5122DFR Datasheet (2.30 MB)

Preview of H5MS5122DFR PDF

Datasheet Details

Part number:

H5MS5122DFR

Manufacturer:

Hynix Semiconductor

File Size:

2.30 MB

Description:

Mobile ddr sdram 512mbit.
www.DataSheet4U.net 512Mbit MOBILE DDR SDRAM based on 4M x 4Bank x32 I/O Specification of 512Mb (16Mx32bit) Mobile DDR SDRAM Memory Cell Array - Or.

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H5MS5122DFR Mobile DDR SDRAM 512Mbit Hynix Semiconductor

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