H5MS5122DFR Datasheet (Hynix Semiconductor)

H5MS5122DFR, Mobile DDR SDRAM 512Mbit

and is subject to change without notice.

Hynix does not assume any responsibility for use of circuits described.

No patent licenses are implied.

Rev 1.2 / Jul.

2008 1 www.DataSheet4U.net 11 Mobile DDR SDRAM 512Mbit (16M x 32bit) H5MS5122DFR Series / H5MS5132DFR Series Document Title 512MBit (4Ban

H5MS5122DFR Features

* SUMMARY

* Mobile DDR SDRAM - Double data rate architecture: two data transfer per clock cycle

* Mobile DDR SDRAM INTERFACE - x32 bus width - Multiplexed Address (Row address and Column address)

* BURST LENGTH

* SUPPLY VOLTAGE - 1.8V device: VDD and VDDQ = 1.7V to 1.95V

* MEMORY C