H5MS5122DFR Mobile DDR SDRAM 512Mbit

Hynix Semiconductor

Description

www.DataSheet4U.net 512Mbit MOBILE DDR SDRAM based on 4M x 4Bank x32 I/O Specification of 512Mb (16Mx32bit) Mobile DDR SDRAM Memory Cell Array - Or.
and is subject to change without notice.

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Datasheet Specifications

Part number: H5MS5122DFR
Manufacturer: Hynix Semiconductor
File Size: 2.30 MB
Datasheet: H5MS5122DFR_HynixSemiconductor.pdf
Description: Mobile DDR SDRAM 512Mbit

Features

* SUMMARY
* Mobile DDR SDRAM - Double data rate architecture: two data transfer per clock cycle
* Mobile DDR SDRAM INTERFACE - x32 bus width - Multiplexed Address (Row address and Column address)
* BURST LENGTH
* SUPPLY VOLTAGE - 1.8V device: VDD and VDDQ = 1.7V to 1.95V
* MEMORY C

Applications

* which use the battery such as PDAs, 2.5G and 3G cellular phones with internet access and multimedia capabilities, mini-notebook, hand-held PCs. It is organized as 4banks of 4,194,304 x32. The HYNIX H5MS5122DFR series uses a double-data-rate architecture to achieve high-speed operation. The double da

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