HY51V65163HGT-45 4M x 16Bit EDO DRAM

Hynix Semiconductor

Description

HY51V(S)65163HG/HGL 4M x 16Bit EDO DRAM PRELIMINARY .
This familiy is a 64Mbit dynamic RAM organized 4,194,304 x 16bit configuration with Extended Data Out mode CMOS DRAMs.

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Datasheet Specifications

Part number: HY51V65163HGT-45
Manufacturer: Hynix Semiconductor
File Size: 96.60 KB
Datasheet: HY51V65163HGT-45_HynixSemiconductor.pdf
Description: 4M x 16Bit EDO DRAM

Features

* are access time(45ns or 50ns) and refresh cycle(4K ref ) and power consumption (Normal or low power with self refresh). Advanced CMOS process as well as circuit techniques for wide operating margins allow this device to achieve high speed access and high reliability FEATURES

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HY51V65163HGT-45 16Bit EDO DRAM Hynix Semiconductor

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