Datasheet4U Logo Datasheet4U.com

HY51V65163HGJ-6

4M x 16Bit EDO DRAM

HY51V65163HGJ-6 Features

* are access time(45ns or 50ns) and refresh cycle(4K ref ) and power consumption (Normal or low power with self refresh). Advanced CMOS process as well as circuit techniques for wide operating margins allow this device to achieve high speed access and high reliability FEATURES

HY51V65163HGJ-6 General Description

This familiy is a 64Mbit dynamic RAM organized 4,194,304 x 16bit configuration with Extended Data Out mode CMOS DRAMs. Extended data out mode is a kind of page mode which is useful for the read operation. The advanced circuit and process allow this device to achieve high performance and low power di.

HY51V65163HGJ-6 Datasheet (96.60 KB)

Preview of HY51V65163HGJ-6 PDF

Datasheet Details

Part number:

HY51V65163HGJ-6

Manufacturer:

Hynix Semiconductor

File Size:

96.60 KB

Description:

4m x 16bit edo dram.

📁 Related Datasheet

HY51V65163HGJ-45 4M x 16Bit EDO DRAM (Hynix Semiconductor)

HY51V65163HGJ-5 4M x 16Bit EDO DRAM (Hynix Semiconductor)

HY51V65163HG 4M x 16Bit EDO DRAM (Hynix Semiconductor)

HY51V65163HGT-45 4M x 16Bit EDO DRAM (Hynix Semiconductor)

HY51V65163HGT-5 4M x 16Bit EDO DRAM (Hynix Semiconductor)

HY51V65163HGT-6 4M x 16Bit EDO DRAM (Hynix Semiconductor)

HY51V18163HGJ 1M x 16Bit EDO DRAM (Hynix Semiconductor)

HY51V18163HGJ-5 1M x 16Bit EDO DRAM (Hynix Semiconductor)

HY51V18163HGJ-6 1M x 16Bit EDO DRAM (Hynix Semiconductor)

HY51V18163HGJ-7 1M x 16Bit EDO DRAM (Hynix Semiconductor)

TAGS

HY51V65163HGJ-6 16Bit EDO DRAM Hynix Semiconductor

Image Gallery

HY51V65163HGJ-6 Datasheet Preview Page 2 HY51V65163HGJ-6 Datasheet Preview Page 3

HY51V65163HGJ-6 Distributor