HY51V65163HGJ-6 Datasheet, Dram, Hynix Semiconductor

HY51V65163HGJ-6 Features

• Dram are access time(45ns or 50ns) and refresh cycle(4K ref ) and power consumption (Normal or low power with self refresh). Advanced CMOS process as well as circuit techniques for wide oper

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HY51V65163HGJ-6

Manufacturer:

Hynix Semiconductor

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96.60kb

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📄 Datasheet

Description:

4m x 16bit edo dram. This familiy is a 64Mbit dynamic RAM organized 4,194,304 x 16bit configuration with Extended Data Out mode CMOS DRAMs. Extended data

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HY51V65163HGJ-6

Hynix Semiconductor

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