Datasheet Specifications
- Part number
- HY51V65163HGJ-6
- Manufacturer
- Hynix Semiconductor
- File Size
- 96.60 KB
- Datasheet
- HY51V65163HGJ-6_HynixSemiconductor.pdf
- Description
- 4M x 16Bit EDO DRAM
Description
HY51V(S)65163HG/HGL 4M x 16Bit EDO DRAM PRELIMINARY .
Features
* are access time(45ns or 50ns) and refresh cycle(4K ref ) and power consumption (Normal or low power with self refresh). Advanced CMOS process as well as circuit techniques for wide operating margins allow this device to achieve high speed access and high reliability FEATURESHY51V65163HGJ-6 Distributors
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