Datasheet4U.com

HY51V65163HGT-6 - 4M x 16Bit EDO DRAM

Hynix Semiconductor

📥 Download Datasheet

HY51V65163HGT-6 Datasheet Preview — Preview of HY51V65163HGT-6 PDF

datasheet Preview Page 2

datasheet Preview Page 3

Datasheet Details

Part number: HY51V65163HGT-6
Manufacturer: Hynix Semiconductor
File Size: 96.60 KB
Datasheet: HY51V65163HGT-6_HynixSemiconductor.pdf
Description: 4M x 16Bit EDO DRAM

HY51V65163HGT-6 Product details

Description

This familiy is a 64Mbit dynamic RAM organized 4,194,304 x 16bit configuration with Extended Data Out mode CMOS DRAMs.

Features

are access time(45ns or 50ns) and refresh cycle(4K ref ) and power consumption (Normal or low power with self refresh). Advanced CMOS process as well as circuit techniques for wide operating margins allow this device to achieve high speed access and high reliability.

📁 Related Datasheet

HY5100 - 2 Input / 3 Output Digital Delay Line (Hytek)
HY510N - PC POWER SUPPLY SUPERVISOR (HawYang)
HY5110A - N-Channel Enhancement Mode MOSFET (HUAYI)
HY5110NA2W - N-Channel Enhancement Mode MOSFET (HUAYI)
HY5110W - N-Channel Enhancement Mode MOSFET (HUAYI)
HY5116164B - Extended Data Out mode (Hyundai)
HY5116164C - Extended Data Out mode (Hyundai)
HY5116400B - 4M x 4-Bit CMOS DRAM (Hyundai Electronics)

📌 All Tags

16Bit EDO DRAM Hynix Semiconductor

Hynix Semiconductor HY51V65163HGT-6-like datasheet

HY51V65163HGT-45 - 4M x 16Bit EDO DRAM
HY51V65163HGT-5 - 4M x 16Bit EDO DRAM
HY51V65163HG - 4M x 16Bit EDO DRAM
HY51V65163HGJ-45 - 4M x 16Bit EDO DRAM
HY51V65163HGJ-5 - 4M x 16Bit EDO DRAM
HY51V65163HGJ-6 - 4M x 16Bit EDO DRAM

HY51V65163HGT-6 Stock/Price