Part number:
HY51V65163HGT-5
Manufacturer:
Hynix Semiconductor
File Size:
96.60 KB
Description:
4m x 16bit edo dram.
* are access time(45ns or 50ns) and refresh cycle(4K ref ) and power consumption (Normal or low power with self refresh). Advanced CMOS process as well as circuit techniques for wide operating margins allow this device to achieve high speed access and high reliability FEATURES
HY51V65163HGT-5 Datasheet (96.60 KB)
HY51V65163HGT-5
Hynix Semiconductor
96.60 KB
4m x 16bit edo dram.
📁 Related Datasheet
HY51V65163HGT-45 4M x 16Bit EDO DRAM (Hynix Semiconductor)
HY51V65163HGT-6 4M x 16Bit EDO DRAM (Hynix Semiconductor)
HY51V65163HG 4M x 16Bit EDO DRAM (Hynix Semiconductor)
HY51V65163HGJ-45 4M x 16Bit EDO DRAM (Hynix Semiconductor)
HY51V65163HGJ-5 4M x 16Bit EDO DRAM (Hynix Semiconductor)
HY51V65163HGJ-6 4M x 16Bit EDO DRAM (Hynix Semiconductor)
HY51V18163HGJ 1M x 16Bit EDO DRAM (Hynix Semiconductor)
HY51V18163HGJ-5 1M x 16Bit EDO DRAM (Hynix Semiconductor)
HY51V18163HGJ-6 1M x 16Bit EDO DRAM (Hynix Semiconductor)
HY51V18163HGJ-7 1M x 16Bit EDO DRAM (Hynix Semiconductor)