HY5756820CT, HY5756820C - 4 Banks x 8M x 8Bit Synchronous DRAM

Hynix Semiconductor

The HY5756820CT by Hynix Semiconductor is a 4 Banks x 8M x 8Bit Synchronous DRAM. Below is the official datasheet preview.

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HY5756820CT 4 Banks x 8M x 8Bit Synchronous DRAM by Hynix Semiconductor - Datasheet Preview — Official preview page of the **HY5756820CT** 4 Banks x 8M x 8Bit Synchronous DRAM datasheet (Hynix Semiconductor).

Datasheet Details

Part number	HY5756820CT, HY5756820C
Manufacturer	Hynix Semiconductor
File Size	101.17 KB
Description	4 Banks x 8M x 8Bit Synchronous DRAM
Datasheet	HY5756820C_HynixSemiconductor.pdf
Note	This datasheet PDF includes multiple part numbers: HY5756820CT, HY5756820C. Please refer to the document for exact specifications by model.
Additional preview pages of the HY5756820CT datasheet.

HY5756820CT Product details

Description

The HY57V56820C is a 268,435,456bit CMOS Synchronous DRAM, ideally suited for the main memory applications which require large memory density and high bandwidth.

Features

Single 3.3±0.3V power supply All device pins are compatible with LVTTL interface JEDEC standard 400mil 54pin TSOP-II with 0.8mm of pin pitch All inputs and outputs referenced to positive edge of system clock Data mask function by DQM Internal four banks operation.
Auto refresh and self refresh 8192 refresh cycles / 64ms Programmable Burst Length and Burst Type - 1, 2, 4, 8 or Full page for Sequential Burst.
- 1, 2, 4 o.

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Other Datasheets by Hynix Semiconductor

HY5756820C - 4 Banks x 8M x 8Bit Synchronous DRAM
HY5756820LT - 4 Banks x 8M x 8Bit Synchronous DRAM
HY57V121620LT - Synchronous DRAM
HY57V121620T - Synchronous DRAM
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Published: Dec 22, 2006 |