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HY57V121620LT, HY57V121620T Datasheet - Hynix Semiconductor

HY57V121620T_HynixSemiconductor.pdf

This datasheet PDF includes multiple part numbers: HY57V121620LT, HY57V121620T. Please refer to the document for exact specifications by model.
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Datasheet Details

Part number:

HY57V121620LT, HY57V121620T

Manufacturer:

Hynix Semiconductor

File Size:

186.66 KB

Description:

Synchronous dram.

Note:

This datasheet PDF includes multiple part numbers: HY57V121620LT, HY57V121620T.
Please refer to the document for exact specifications by model.

HY57V121620LT, HY57V121620T, Synchronous DRAM

The HY57V121620 is a 512-Mbit CMOS Synchronous DRAM, ideally suited for the main memory applications which require large memory density and high bandwidth.

HY57V121620 is organized as 4banks of 8,388,608x16.

HY57V121620 is offering fully synchronous operation referenced to a positive edge of the clo

HY57V121620LT Features

* Single 3.3±0.3V power supply All device pins are compatible with LVTTL interface JEDEC standard 400mil 54pin TSOP-II with 0.8mm of pin pitch All inputs and outputs referenced to positive edge of system clock Data mask function by UDQM, LDQM Internal four banks operation

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