Datasheet Details
Part number:
HY57V121620T
Manufacturer:
Hynix Semiconductor
File Size:
186.66 KB
Description:
Synchronous dram.
HY57V121620T_HynixSemiconductor.pdf
Datasheet Details
Part number:
HY57V121620T
Manufacturer:
Hynix Semiconductor
File Size:
186.66 KB
Description:
Synchronous dram.
HY57V121620T, Synchronous DRAM
The HY57V121620 is a 512-Mbit CMOS Synchronous DRAM, ideally suited for the main memory applications which require large memory density and high bandwidth.
HY57V121620 is organized as 4banks of 8,388,608x16.
HY57V121620 is offering fully synchronous operation referenced to a positive edge of the clo
HY57V121620T Features
* Single 3.3±0.3V power supply All device pins are compatible with LVTTL interface JEDEC standard 400mil 54pin TSOP-II with 0.8mm of pin pitch All inputs and outputs referenced to positive edge of system clock Data mask function by UDQM, LDQM Internal four banks operation
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