Datasheet Specifications
- Part number
- HY57V121620T
- Manufacturer
- Hynix Semiconductor
- File Size
- 186.66 KB
- Datasheet
- HY57V121620T_HynixSemiconductor.pdf
- Description
- Synchronous DRAM
Description
www.DataSheet4U.com HY57V121620(L)T 4 Banks x 8M x 16Bit Synchronous DRAM .
Features
* Single 3.3±0.3V power supply All device pins are compatible with LVTTL interface JEDEC standard 400mil 54pin TSOP-II with 0.8mm of pin pitch All inputs and outputs referenced to positive edge of system clock Data mask function by UDQM, LDQM Internal four banks operationApplications
* which require large memory density and high bandwidth. HY57V121620 is organized as 4banks of 8,388,608x16. HY57V121620 is offering fully synchronous operation referenced to a positive edge of the clock. All inputs and outputs are synchronized with the rising edge of the clock input. The data paths aHY57V121620T Distributors
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