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HY57V281620HCT (HY57V281620HC(L/S)T) 4 Banks x 2M x 16-Bits SDRAM

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Description

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The Hynix HY57V281620HC(L/S)T is a 134,217,728bit CMOS Synchronous DRAM, ideally suited for the main memory applications which require large memory de.

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Datasheet Specifications

Part number
HY57V281620HCT
Manufacturer
Hynix Semiconductor
File Size
262.25 KB
Datasheet
HY57V281620HCT_HynixSemiconductor.pdf
Description
(HY57V281620HC(L/S)T) 4 Banks x 2M x 16-Bits SDRAM

Features

* Single 3.3±0.3V power supply All device pins are compatible with LVTTL interface JEDEC standard 400mil 54pin TSOP-II with 0.8mm of pin pitch All inputs and outputs referenced to positive edge of system clock Data mask function by UDQM or LDQM Internal four banks operati

Applications

* which require large memory density and high bandwidth. HY57V281620HC(L/S)T is organized as 4banks of 2,097,152x16 HY57V281620HC(L/S)T is offering fully synchronous operation referenced to a positive edge of the clock. All inputs and outputs are synchronized with the rising edge of the clock input. T

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