HY57V281620HCT Datasheet (Hynix Semiconductor) - (HY57V281620HC(L/S)T) 4 Banks x 2M x 16-Bits SDRAM

HY57V281620HCT, (HY57V281620HC(L/S)T) 4 Banks x 2M x 16-Bits SDRAM

The Hynix HY57V281620HC(L/S)T is a 134,217,728bit CMOS Synchronous DRAM, ideally suited for the main memory applications which require large memory density and high bandwidth.

HY57V281620HC(L/S)T is organized as 4banks of 2,097,152x16 HY57V281620HC(L/S)T is offering fully synchronous operation refer

HY57V281620HCT Features

* Single 3.3±0.3V power supply All device pins are compatible with LVTTL interface JEDEC standard 400mil 54pin TSOP-II with 0.8mm of pin pitch All inputs and outputs referenced to positive edge of system clock Data mask function by UDQM or LDQM Internal four banks operati