HY57V281620HST, HY57V281620HCT (HY57V281620HC(L/S)T) 4 Banks x 2M x 16-Bits SDRAM

Hynix Semiconductor

HY57V281620HST Description

( DataSheet : www.DataSheet4U.com ) 0.1 : Hynix Change 0.2 : 143Mhz Add, Burst read single write mode correction www.DataSheet4U.com www.DataSheet4.
The Hynix HY57V281620HC(L/S)T is a 134,217,728bit CMOS Synchronous DRAM, ideally suited for the main memory applications which require large memory de.

HY57V281620HST Features

* Single 3.3±0.3V power supply All device pins are compatible with LVTTL interface JEDEC standard 400mil 54pin TSOP-II with 0.8mm of pin pitch All inputs and outputs referenced to positive edge of system clock Data mask function by UDQM or LDQM Internal four banks operati

HY57V281620HST Applications

* which require large memory density and high bandwidth. HY57V281620HC(L/S)T is organized as 4banks of 2,097,152x16 HY57V281620HC(L/S)T is offering fully synchronous operation referenced to a positive edge of the clock. All inputs and outputs are synchronized with the rising edge of the clock input. T

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HY57V281620HST Datasheet Preview — This datasheet PDF includes multiple part numbers: HY57V281620HST, HY57V281620HCT. Please refer to the document for exact specifications by model.

Datasheet Details

Part number: HY57V281620HST, HY57V281620HCT
Manufacturer: Hynix Semiconductor
File Size: 262.25 KB
Datasheet: HY57V281620HCT_HynixSemiconductor.pdf
Description: (HY57V281620HC(L/S)T) 4 Banks x 2M x 16-Bits SDRAM
Note: This datasheet PDF includes multiple part numbers: HY57V281620HST, HY57V281620HCT.
Please refer to the document for exact specifications by model.

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