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HY57V561620L, HY57V561620 Datasheet - Hynix Semiconductor

HY57V561620_HynixSemiconductor.pdf

This datasheet PDF includes multiple part numbers: HY57V561620L, HY57V561620. Please refer to the document for exact specifications by model.
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Datasheet Details

Part number:

HY57V561620L, HY57V561620

Manufacturer:

Hynix Semiconductor

File Size:

151.78 KB

Description:

4banks x 4m x 16bit synchronous dram.

Note:

This datasheet PDF includes multiple part numbers: HY57V561620L, HY57V561620.
Please refer to the document for exact specifications by model.

HY57V561620L, HY57V561620, 4Banks x 4M x 16Bit Synchronous DRAM

The HY57V561620T is a 268,435,456bit CMOS Synchronous DRAM, ideally suited for the main memory applications which require large memory density and high bandwidth.

HY57V561620 is organized as 4 banks of 4,194,304x16.

The HY57V561620T is offering fully synchronous operation referenced to a positive ed

HY57V561620L Features

* Single 3.3V ± 0.3V power supply All device pins are compatible with LVTTL interface JEDEC standard 400mil 54pin TSOP-II with 0.8mm of pin pitch All inputs and outputs referenced to positive edge of system clock Data mask function by UDQM and LDQM Internal four banks ope

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