HY57V561620 Datasheet, DRAM, Hynix Semiconductor

HY57V561620 Features

  • Dram
  • Single 3.3V ± 0.3V power supply All device pins are compatible with LVTTL interface JEDEC standard 400mil 54pin TSOP-II with 0.8mm of pin pitch All inputs

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Part number:

HY57V561620

Manufacturer:

Hynix Semiconductor

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151.78kb

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📄 Datasheet

Description:

4banks x 4m x 16bit synchronous dram. The HY57V561620T is a 268,435,456bit CMOS Synchronous DRAM, ideally suited for the main memory applications which require large memor

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HY57V561620 Application

  • Applications which require large memory density and high bandwidth. HY57V561620 is organized as 4 banks of 4,194,304x16. The HY57V561620T is offerin

TAGS

HY57V561620
4Banks
16Bit
Synchronous
DRAM
Hynix Semiconductor

📁 Related Datasheet

HY57V561620BLT-H - DRAM (Pioneer)
IC INFORMATION Function DRAM Type CMOS HY57V561620BLT-H 1/1 J E Model AVIC-DRV150 VDD1 1 DQ0 2 VDDQ1 3 DQ1 4 DQ2 5 VSSQ1 6 DQ3 7 DQ4 8 VDDQ2 9.

HY57V561620BLT-I - 4 Banks x 4M x 16Bit Synchronous DRAM (Hynix Semiconductor)
HY57V561620B(L)T-I 4 Banks x 4M x 16Bit Synchronous DRAM DESCRIPTION The HY57V561620B-I is a 268,435,456bit CMOS Synchronous DRAM, ideally suited fo.

HY57V561620BT-I - 4 Banks x 4M x 16Bit Synchronous DRAM (Hynix Semiconductor)
HY57V561620B(L)T-I 4 Banks x 4M x 16Bit Synchronous DRAM DESCRIPTION The HY57V561620B-I is a 268,435,456bit CMOS Synchronous DRAM, ideally suited fo.

HY57V561620CLT - 4 Banks x 4M x 16Bit Synchronous DRAM (Hynix Semiconductor)
.. HY57V561620C(L)T(P) 4 Banks x 4M x 16Bit Synchronous DRAM DESCRIPTION The HY57V561620C(L)T(P) Series is a 268,435,456bit CMOS Syn.

HY57V561620CT - 4 Banks x 4M x 16Bit Synchronous DRAM (Hynix Semiconductor)
.. HY57V561620C(L)T(P) 4 Banks x 4M x 16Bit Synchronous DRAM DESCRIPTION The HY57V561620C(L)T(P) Series is a 268,435,456bit CMOS Syn.

HY57V561620CTP - 4 Banks x 4M x 16Bit Synchronous DRAM (Hynix Semiconductor)
.. HY57V561620C(L)T(P) 4 Banks x 4M x 16Bit Synchronous DRAM DESCRIPTION The HY57V561620C(L)T(P) Series is a 268,435,456bit CMOS Syn.

HY57V561620FLT-5 - 256M (16M x 16bit) Hynix SDRAM Memory (Hynix Semiconductor)
256Mb Synchronous DRAM based on 4M x 4Bank x16 I/O 256M (16Mx16bit) Hynix SDRAM Memory Memory Cell Array - Organized as 4banks of 4,194,304 x 16 This.

HY57V561620FLT-6 - 256M (16M x 16bit) Hynix SDRAM Memory (Hynix Semiconductor)
256Mb Synchronous DRAM based on 4M x 4Bank x16 I/O 256M (16Mx16bit) Hynix SDRAM Memory Memory Cell Array - Organized as 4banks of 4,194,304 x 16 This.

HY57V561620FLT-H - 256M (16M x 16bit) Hynix SDRAM Memory (Hynix Semiconductor)
256Mb Synchronous DRAM based on 4M x 4Bank x16 I/O 256M (16Mx16bit) Hynix SDRAM Memory Memory Cell Array - Organized as 4banks of 4,194,304 x 16 This.

HY57V561620FLTP-5 - 256M (16M x 16bit) Hynix SDRAM Memory (Hynix Semiconductor)
256Mb Synchronous DRAM based on 4M x 4Bank x16 I/O 256M (16Mx16bit) Hynix SDRAM Memory Memory Cell Array - Organized as 4banks of 4,194,304 x 16 This.

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