HY57V561620 - 4Banks x 4M x 16Bit Synchronous DRAM

Hynix Semiconductor

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Datasheet Details

Part number: HY57V561620
Manufacturer: Hynix Semiconductor
File Size: 151.78 KB
Datasheet: HY57V561620_HynixSemiconductor.pdf
Description: 4Banks x 4M x 16Bit Synchronous DRAM

HY57V561620 Product details

Description

The HY57V561620T is a 268,435,456bit CMOS Synchronous DRAM, ideally suited for the main memory applications which require large memory density and high bandwidth.

Features

Single 3.3V ± 0.3V power supply All device pins are compatible with LVTTL interface JEDEC standard 400mil 54pin TSOP-II with 0.8mm of pin pitch All inputs and outputs referenced to positive edge of system clock Data mask function by UDQM and LDQM Internal four banks operation.
Auto refresh and self refresh 8192 refresh cycles / 64ms Programmable Burst Length and Burst Type - 1, 2, 4, 8 and Full Page for Sequential Burst.

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4Banks 16Bit Synchronous DRAM Hynix Semiconductor

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