HY57V561620CT - 4 Banks x 4M x 16Bit Synchronous DRAM

Hynix Semiconductor

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Datasheet Details

Part number: HY57V561620CT
Manufacturer: Hynix Semiconductor
File Size: 251.31 KB
Datasheet: HY57V561620CT_HynixSemiconductor.pdf
Description: 4 Banks x 4M x 16Bit Synchronous DRAM

HY57V561620CT Product details

Description

The HY57V561620C(L)T(P) Series is a 268,435,456bit CMOS Synchronous DRAM, ideally suited for the main memory applications which require large memory density and high bandwidth.

Features

Single 3.3±0.3V power supply All device pins are compatible with LVTTL interface JEDEC standard 400mil 54pin TSOP-II with 0.8mm of pin pitch (Leaded Package or Lead Free Package) All inputs and outputs referenced to positive edge of system clock Data mask function by UDQM, LDQM Internal four banks operation.
Auto refresh and self refresh 8192 refresh cycles / 64ms Programmable Burst Length and Burst Type - 1, 2, 4, 8 or Full pa.

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Banks 16Bit Synchronous DRAM Hynix Semiconductor

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