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HY57V561620T

4Banks x 4M x 16Bit Synchronous DRAM

HY57V561620T Features

* Single 3.3V ± 0.3V power supply All device pins are compatible with LVTTL interface JEDEC standard 400mil 54pin TSOP-II with 0.8mm of pin pitch All inputs and outputs referenced to positive edge of system clock Data mask function by UDQM and LDQM Internal four banks ope

HY57V561620T General Description

The HY57V561620T is a 268,435,456bit CMOS Synchronous DRAM, ideally suited for the main memory applications which require large memory density and high bandwidth. HY57V561620 is organized as 4 banks of 4,194,304x16. The HY57V561620T is offering fully synchronous operation referenced to a positive ed.

HY57V561620T Datasheet (151.78 KB)

Preview of HY57V561620T PDF

Datasheet Details

Part number:

HY57V561620T

Manufacturer:

Hynix Semiconductor

File Size:

151.78 KB

Description:

4banks x 4m x 16bit synchronous dram.

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TAGS

HY57V561620T 4Banks 16Bit Synchronous DRAM Hynix Semiconductor

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