HY57V56820BT 4 Banks x 8M x 8Bit Synchronous DRAM

Hynix Semiconductor

HY57V56820BT Description

www.DataSheet4U.com HY57V56820B(L)T 4 Banks x 8M x 8Bit Synchronous DRAM .
The HY57V56820B is a 268,435,456bit CMOS Synchronous DRAM, ideally suited for the main memory applications which require large memory density and high.

HY57V56820BT Features

* Single 3.3±0.3V power supply All device pins are compatible with LVTTL interface JEDEC standard 400mil 54pin TSOP-II with 0.8mm of pin pitch All inputs and outputs referenced to positive edge of system clock Data mask function by DQM Internal four banks operation

HY57V56820BT Applications

* which require large memory density and high bandwidth. The HY57V56820B is organized as 4banks of 8,388,608x8. The HY57V56820B is offering fully synchronous operation referenced to a positive edge of the clock. All inputs and outputs are synchronized with the rising edge of the clock input. The data

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Datasheet Details

Part number: HY57V56820BT
Manufacturer: Hynix Semiconductor
File Size: 173.15 KB
Datasheet: HY57V56820BT_HynixSemiconductor.pdf
Description: 4 Banks x 8M x 8Bit Synchronous DRAM

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Banks 8Bit Synchronous DRAM Hynix Semiconductor

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