HY57V56820CLT, HY57V56820CT 4 Banks x 8M x 8Bit Synchronous DRAM

Hynix Semiconductor

HY57V56820CLT Description

www.DataSheet4U.com HY57V56820C(L)T 4 Banks x 8M x 8Bit Synchronous DRAM .
The HY57V56820C is a 268,435,456bit CMOS Synchronous DRAM, ideally suited for the main memory applications which require large memory density and high.

HY57V56820CLT Features

* Single 3.3±0.3V power supply All device pins are compatible with LVTTL interface JEDEC standard 400mil 54pin TSOP-II with 0.8mm of pin pitch All inputs and outputs referenced to positive edge of system clock Data mask function by DQM Internal four banks operation

HY57V56820CLT Applications

* which require large memory density and high bandwidth. The HY57V56820C is organized as 4banks of 8,388,608x8. The HY57V56820C is offering fully synchronous operation referenced to a positive edge of the clock. All inputs and outputs are synchronized with the rising edge of the clock input. The data

📥 Download Datasheet

HY57V56820CLT Datasheet Preview — This datasheet PDF includes multiple part numbers: HY57V56820CLT, HY57V56820CT. Please refer to the document for exact specifications by model.

Datasheet Details

Part number: HY57V56820CLT, HY57V56820CT
Manufacturer: Hynix Semiconductor
File Size: 108.92 KB
Datasheet: HY57V56820CT_HynixSemiconductor.pdf
Description: 4 Banks x 8M x 8Bit Synchronous DRAM
Note: This datasheet PDF includes multiple part numbers: HY57V56820CLT, HY57V56820CT.
Please refer to the document for exact specifications by model.

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Banks 8Bit Synchronous DRAM Hynix Semiconductor

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