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HY5V66EF6 (HY5V66ExF6x) CMOS Synchronous DRAM

HY5V66EF6 Description

www.DataSheet4U.com 64Mb Synchronous DRAM based on 1M x 4Bank x16 I/O Document Title 4Bank x 1M x 16bits Synchronous DRAM Revision History Revision.
and is subject to change without notice.

HY5V66EF6 Features

* Voltage: VDD, VDDQ 3.3V supply voltage All device pins are compatible with LVTTL interface 60 Ball FBGA (Lead or Lead Free Package) All inputs and outputs referenced to positive edge of system clock Data mask function by UDQM, LDQM

HY5V66EF6 Applications

* which require wide data I/O and high bandwidth. HY5V66E(L)F6(P) is organized as 4banks of 1,048,576 x 16. HY5V66E(L)F6(P) is offering fully synchronous operation referenced to a positive edge of the clock. All inputs and outputs are synchronized with the rising edge of the clock input. The data path

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Datasheet Details

Part number
HY5V66EF6
Manufacturer
Hynix Semiconductor
File Size
253.56 KB
Datasheet
HY5V66EF6_HynixSemiconductor.pdf
Description
(HY5V66ExF6x) CMOS Synchronous DRAM

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📌 All Tags

HY5V66ExF6x CMOS Synchronous DRAM Hynix Semiconductor
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