HY5V66EF6 (HY5V66ExF6x) CMOS Synchronous DRAM

Hynix Semiconductor

Description

www.DataSheet4U.com 64Mb Synchronous DRAM based on 1M x 4Bank x16 I/O Document Title 4Bank x 1M x 16bits Synchronous DRAM Revision History Revision.
and is subject to change without notice.

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Datasheet Specifications

Part number: HY5V66EF6
Manufacturer: Hynix Semiconductor
File Size: 253.56 KB
Datasheet: HY5V66EF6_HynixSemiconductor.pdf
Description: (HY5V66ExF6x) CMOS Synchronous DRAM

Features

* Voltage: VDD, VDDQ 3.3V supply voltage All device pins are compatible with LVTTL interface 60 Ball FBGA (Lead or Lead Free Package) All inputs and outputs referenced to positive edge of system clock Data mask function by UDQM, LDQM

Applications

* which require wide data I/O and high bandwidth. HY5V66E(L)F6(P) is organized as 4banks of 1,048,576 x 16. HY5V66E(L)F6(P) is offering fully synchronous operation referenced to a positive edge of the clock. All inputs and outputs are synchronized with the rising edge of the clock input. The data path

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HY5V66EF6 HY5V66ExF6x CMOS Synchronous DRAM Hynix Semiconductor

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