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HY5V66GF 4 Banks X 1M X 16Bit Synchronous DRAM

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Description

www.DataSheet4U.com HY5V66GF 4 Banks x 1M x 16Bit Synchronous DRAM .
The Hyundai HY5V66GF is a 67,108,864-bit CMOS Synchronous DRAM, ideally suited for the main memory applications which require large memory density and.

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Datasheet Specifications

Part number
HY5V66GF
Manufacturer
Hynix Semiconductor
File Size
235.30 KB
Datasheet
HY5V66GF_HynixSemiconductor.pdf
Description
4 Banks X 1M X 16Bit Synchronous DRAM

Features

* Single 3.3±0.3V power supply Note) All device pins are compatible with LVTTL interface JEDEC standard 60Ball FD-BGA with 0.65mm of pin pitch All inputs and outputs referenced to positive edge of system clock Data mask function by UDQM or LDQM Internal four banks operati

Applications

* which require large memory density and high bandwidth. HY5V66GF is organized as 4banks of 1,048,576x16. HY5V66GF is offering fully synchronous operation referenced to a positive edge of the clock. All inputs and outputs are synchronized with the rising edge of the clock input. The data paths are int

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