Datasheet4U Logo Datasheet4U.com

HY5V66GF 4 Banks X 1M X 16Bit Synchronous DRAM

HY5V66GF Description

www.DataSheet4U.com HY5V66GF 4 Banks x 1M x 16Bit Synchronous DRAM .
The Hyundai HY5V66GF is a 67,108,864-bit CMOS Synchronous DRAM, ideally suited for the main memory applications which require large memory density and.

HY5V66GF Features

* Single 3.3±0.3V power supply Note) All device pins are compatible with LVTTL interface JEDEC standard 60Ball FD-BGA with 0.65mm of pin pitch All inputs and outputs referenced to positive edge of system clock Data mask function by UDQM or LDQM Internal four banks operati

HY5V66GF Applications

* which require large memory density and high bandwidth. HY5V66GF is organized as 4banks of 1,048,576x16. HY5V66GF is offering fully synchronous operation referenced to a positive edge of the clock. All inputs and outputs are synchronized with the rising edge of the clock input. The data paths are int

📥 Download Datasheet

Preview of HY5V66GF PDF
datasheet Preview Page 2 datasheet Preview Page 3

Datasheet Details

Part number
HY5V66GF
Manufacturer
Hynix Semiconductor
File Size
235.30 KB
Datasheet
HY5V66GF_HynixSemiconductor.pdf
Description
4 Banks X 1M X 16Bit Synchronous DRAM

📁 Related Datasheet

  • HY5-P - Current Transducers HY 5 to 25-P (LEM)
  • HY50-P - Current Transducer HY 50-P (LEM)
  • HY5002 - 1-chip composed of high-current totem pole (HAWYANG)
  • HY5012A - N-Channel Enhancement Mode MOSFET (HOOYI)
  • HY5012W - N-Channel Enhancement Mode MOSFET (HOOYI)
  • HY50P - Current Transducers/ HY 50-P/SP1 (LEM)
  • HY5100 - 2 Input / 3 Output Digital Delay Line (Hytek)
  • HY510N - PC POWER SUPPLY SUPERVISOR (HawYang)

📌 All Tags

Hynix Semiconductor HY5V66GF-like datasheet