HY5V66GF Datasheet (Hynix Semiconductor) - 4 Banks X 1M X 16Bit Synchronous DRAM

HY5V66GF, 4 Banks X 1M X 16Bit Synchronous DRAM

The Hyundai HY5V66GF is a 67,108,864-bit CMOS Synchronous DRAM, ideally suited for the main memory applications which require large memory density and high bandwidth.

HY5V66GF is organized as 4banks of 1,048,576x16.

HY5V66GF is offering fully synchronous operation referenced to a positive edge of th

HY5V66GF Features

* Single 3.3±0.3V power supply Note) All device pins are compatible with LVTTL interface JEDEC standard 60Ball FD-BGA with 0.65mm of pin pitch All inputs and outputs referenced to positive edge of system clock Data mask function by UDQM or LDQM Internal four banks operati