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HY5V66EF6P Datasheet - Hynix Semiconductor

(HY5V66ExF6x) CMOS Synchronous DRAM

HY5V66EF6P Features

* Voltage: VDD, VDDQ 3.3V supply voltage All device pins are compatible with LVTTL interface 60 Ball FBGA (Lead or Lead Free Package) All inputs and outputs referenced to positive edge of system clock Data mask function by UDQM, LDQM

HY5V66EF6P General Description

and is subject to change without notice. Hynix does not assume any responsibility for use of circuits described. No patent licenses are implied. Rev. 0.2 / June. 2005 1 www.DataSheet4U.com Synchronous DRAM Memory 64Mbit (4Mx16bit) HY5V66E(L)F6(P) Series 11Preliminary DESCRIPTION The Hynix HY5V66.

HY5V66EF6P Datasheet (253.56 KB)

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Datasheet Details

Part number:

HY5V66EF6P

Manufacturer:

Hynix Semiconductor

File Size:

253.56 KB

Description:

(hy5v66exf6x) cmos synchronous dram.
www.DataSheet4U.com 64Mb Synchronous DRAM based on 1M x 4Bank x16 I/O Document Title 4Bank x 1M x 16bits Synchronous DRAM Revision History Revision.

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HY5V66EF6P HY5V66ExF6x CMOS Synchronous DRAM Hynix Semiconductor

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