2N5661 Datasheet, Transistor, INCHANGE

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2N5661

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INCHANGE

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📄 Datasheet

Description:

Silicon npn power transistor.

Collector-Emitter Breakdown Voltage- : VCEO=300V(Min)

Minimum Lot-to-Lot variations for robust device Performance a

2N5661 Application

• Applications
• Power amplifier and switching applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNI T VCBO Collector-

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2N5661

INCHANGE

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