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2N5661

Silicon NPN Power Transistor

2N5661 General Description


*Collector-Emitter Breakdown Voltage- : VCEO=300V(Min)
*Minimum Lot-to-Lot variations for robust device Performance and reliable operation APPLICATIONS
*Power amplifier and switching applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNI T VCBO Collector-Base Vol.

2N5661 Datasheet (217.46 KB)

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Datasheet Details

Part number:

2N5661

Manufacturer:

INCHANGE

File Size:

217.46 KB

Description:

Silicon npn power transistor.

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2N5661 Silicon NPN Power Transistor INCHANGE

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