Datasheet Details
| Part number | 2N5661 | 
|---|---|
| Manufacturer | INCHANGE | 
| File Size | 217.46 KB | 
| Description | Silicon NPN Power Transistor | 
| Datasheet |  2N5661-INCHANGE.pdf | 
 
		  | Part number | 2N5661 | 
|---|---|
| Manufacturer | INCHANGE | 
| File Size | 217.46 KB | 
| Description | Silicon NPN Power Transistor | 
| Datasheet |  2N5661-INCHANGE.pdf | 
Collector-Emitter Breakdown Voltage- : VCEO=300V(Min) Minimum Lot-to-Lot variations for robust device Performance and reliable operation APPLICATIONS Power amplifier and switching applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNI T VCBO Collector-Base Voltage 400 V VCEO Collector-Emitter Voltage 300 V VEBO Emitter-Base Voltage 6 V IC Collector Current-Continuous PD Collector Power Dissipation @ TC=25℃ TJ Junction Temperature 2 A 2
📁 2N5661 Similar Datasheet