Datasheet4U Logo Datasheet4U.com

2N5661 Datasheet - INCHANGE

2N5661 Silicon NPN Power Transistor

*Collector-Emitter Breakdown Voltage- : VCEO=300V(Min) *Minimum Lot-to-Lot variations for robust device Performance and reliable operation APPLICATIONS *Power amplifier and switching applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNI T VCBO Collector-Base Vol.

2N5661-INCHANGE.pdf

Preview of 2N5661 PDF
2N5661 Datasheet Preview Page 2

Datasheet Details

Part number:

2N5661

Manufacturer:

INCHANGE

File Size:

217.46 KB

Description:

Silicon npn power transistor.

📁 Related Datasheet

2N5660 NPN POWER SILICON TRANSISTOR (Microsemi Corporation)

2N5660 Bipolar NPN Device (Seme LAB)

2N5660 (2N5660 / 2N5661) Silicon NPN Power Transistors (SavantIC)

2N5661 NPN POWER SILICON TRANSISTOR (Microsemi Corporation)

2N5661 Bipolar NPN Device (Seme LAB)

2N5661 Silicon NPN Transistor (Semicoa Semiconductor)

2N5661 (2N5660 / 2N5661) Silicon NPN Power Transistors (SavantIC)

2N5662 NPN POWER SILICON TRANSISTOR (Microsemi Corporation)

TAGS

2N5661 2N5661 Silicon NPN Power Transistor INCHANGE

2N5661 Distributor