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2N5661 Silicon NPN Power Transistor

2N5661 Description

isc Silicon NPN Power Transistor .
Collector-Emitter Breakdown Voltage- : VCEO=300V(Min). Minimum Lot-to-Lot variations for robust device Performance and reliable operation AP.

2N5661 Applications

* Power amplifier and switching applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNI T VCBO Collector-Base Voltage 400 V VCEO Collector-Emitter Voltage 300 V VEBO Emitter-Base Voltage 6 V IC Collector Current-Continuous PD Collector Power Dissipation @ TC=2

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Datasheet Details

Part number
2N5661
Manufacturer
INCHANGE
File Size
217.46 KB
Datasheet
2N5661-INCHANGE.pdf
Description
Silicon NPN Power Transistor

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Silicon NPN Power Transistor INCHANGE
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