2N5665 Silicon NPN Power Transistor

INCHANGE

Description

isc Silicon NPN Power Transistor .
Collector-Emitter Breakdown Voltage- : VCEO=300V(Min). Minimum Lot-to-Lot variations for robust device Performance and reliable operation AP.

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Datasheet Specifications

Part number: 2N5665
Manufacturer: INCHANGE
File Size: 216.98 KB
Datasheet: 2N5665-INCHANGE.pdf
Description: Silicon NPN Power Transistor

Applications

* Power amplifier and switching applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNI T VCBO Collector-Base Voltage 400 V VCEO Collector-Emitter Voltage 300 V VEBO Emitter-Base Voltage 6 V IC Collector Current-Continuous PD Collector Power Dissipation @ TC=2

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2N5665 Silicon NPN Power Transistor INCHANGE

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