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2N6032

Silicon NPN Power Transistor

2N6032 General Description


*Collector-Emitter Breakdown Voltage- : V(BR)CEO=90V(Min)
*Minimum Lot-to-Lot variations for robust device Performance and reliable operation APPLICATIONS
*Power amplifier and switching applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNI T VCBO Collector-Base .

2N6032 Datasheet (215.66 KB)

Preview of 2N6032 PDF

Datasheet Details

Part number:

2N6032

Manufacturer:

INCHANGE

File Size:

215.66 KB

Description:

Silicon npn power transistor.

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2N6032 Silicon NPN Power Transistor INCHANGE

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