2N6032 Datasheet - INCHANGE

datasheet Preview Page 1 from Datasheet4u.com

2N6032 Silicon NPN Power Transistor

isc Silicon NPN Power Transistor .
Collector-Emitter Breakdown Voltage- : V(BR)CEO=90V(Min). Minimum Lot-to-Lot variations for robust device Performance and reliable operation.

2N6032-INCHANGE.pdf

2N6032 Datasheet Preview — Preview of 2N6032 PDF

Datasheet Details

Part number:

2N6032

Manufacturer:

INCHANGE

File Size:

215.66 KB

Description:

Silicon NPN Power Transistor

Applications

* Power amplifier and switching applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNI T VCBO Collector-Base Voltage 120 V VCEO Collector-Emitter Voltage 90 V VEBO Emitter-Base Voltage 7 V IC Collector Current-Continuous 50 A IB Base Current-Continuous PD

2N6032 Distributors

📁 Related Datasheet

2N6030 2N6031 2N6033 2N6034 2N6034G 2N6035

📌 All Tags

2N6032 Silicon NPN Power Transistor INCHANGE

INCHANGE 2N6032-like datasheet