Datasheet4U Logo Datasheet4U.com

2N6032 - Silicon NPN Power Transistor

2N6032 Description

isc Silicon NPN Power Transistor .
Collector-Emitter Breakdown Voltage- : V(BR)CEO=90V(Min). Minimum Lot-to-Lot variations for robust device Performance and reliable operation.

2N6032 Applications

* Power amplifier and switching applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNI T VCBO Collector-Base Voltage 120 V VCEO Collector-Emitter Voltage 90 V VEBO Emitter-Base Voltage 7 V IC Collector Current-Continuous 50 A IB Base Current-Continuous PD

📥 Download Datasheet

Preview of 2N6032 PDF
datasheet Preview Page 2

Datasheet Details

Part number
2N6032
Manufacturer
INCHANGE
File Size
215.66 KB
Datasheet
2N6032-INCHANGE.pdf
Description
Silicon NPN Power Transistor

📁 Related Datasheet

  • 2N6030 - COMPLEMENTARY SILICON POWER TRANSISTORS (Central Semiconductor Corp)
  • 2N6031 - POWER TRANSISTORS (ON Semiconductor)
  • 2N6033 - Bipolar NPN Device (Seme LAB)
  • 2N6034 - MIDIUM POWER TRANSISTOR (STMicroelectronics)
  • 2N6034G - Plastic Darlington Complementary Silicon Power Transistors (ON Semiconductor)
  • 2N6035 - MIDIUM POWER TRANSISTOR (STMicroelectronics)
  • 2N6035G - Plastic Darlington Complementary Silicon Power Transistors (ON Semiconductor)
  • 2N6036 - Complementary power Darlington transistors (STMicroelectronics)

📌 All Tags

Silicon NPN Power Transistor INCHANGE
INCHANGE 2N6032-like datasheet