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2N6032 - Silicon NPN Power Transistor

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Part number 2N6032
Manufacturer INCHANGE
File Size 215.66 KB
Description Silicon NPN Power Transistor
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Description

Collector-Emitter Breakdown Voltage- : V(BR)CEO=90V(Min) Minimum Lot-to-Lot variations for robust device Performance and reliable operation APPLICATIONS Power amplifier and switching applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNI T VCBO Collector-Base Voltage 120 V VCEO Collector-Emitter Voltage 90 V VEBO Emitter-Base Voltage 7 V IC Collector Current-Continuous 50 A IB Base Current-Continuous PD Collector Power Dissipation @ TC=25

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