2N6056 NPN Transistor

INCHANGE

Description

INCHANGE Semiconductor isc Silicon NPN Darlingtion Power Transistor 2N6056 .
Built-in Base-Emitter Shunt Resistors. Low Collector-Emitter Saturation Voltage- : VCE (sat)= 2. Collector-Emitter Sust.

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Datasheet Specifications

Part number: 2N6056
Manufacturer: INCHANGE
File Size: 190.93 KB
Datasheet: 2N6056-INCHANGE.pdf
Description: NPN Transistor

Applications

* Designed for general purpose amplifier and low frequency switching applications. ABSOLUTE MAXIMUM RATINGS(TC=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 80 V VCEO Collector-Emitter Voltage 80 V VEBO Emitter-Base Voltage 5 V IC Collector Current -Continuous 8

2N6056 Distributors

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2N6056 NPN Transistor INCHANGE

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