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2N6056 NPN Transistor

2N6056 Description

INCHANGE Semiconductor isc Silicon NPN Darlingtion Power Transistor 2N6056 .
Built-in Base-Emitter Shunt Resistors. Low Collector-Emitter Saturation Voltage- : VCE (sat)= 2. Collector-Emitter Sust.

2N6056 Applications

* Designed for general purpose amplifier and low frequency switching applications. ABSOLUTE MAXIMUM RATINGS(TC=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 80 V VCEO Collector-Emitter Voltage 80 V VEBO Emitter-Base Voltage 5 V IC Collector Current -Continuous 8

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Datasheet Details

Part number
2N6056
Manufacturer
INCHANGE
File Size
190.93 KB
Datasheet
2N6056-INCHANGE.pdf
Description
NPN Transistor

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NPN Transistor INCHANGE
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