2N60 Datasheet - INCHANGE

2N60, TO-251 N-Channel MOSFET

isc N-Channel MOSFET Transistor 2N60 *

Features

* Drain Current ID= 2A@ TC=25℃
* Drain Source Voltage- : VDSS= 600V(Min)
* Static Drain-Source On-Resistance : RDS(on) = 5.0Ω(Max)
* 100% avalanche tested
* Minimum Lot-to-Lot variations for robust device performance and reliable operation

Applications

* Switching power supplies,converters,AC and DC motor controls
* ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VDSS Drain-Source Voltage 600 V VGS Gate-Source Voltage-Continuous ±30 V ID Drain Current-Continuous 2 A IDM Drain Current-Single Plused 8 A PD T

2N60-INCHANGE.pdf