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2N6425 - Silicon PNP Power Transistor

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Part number 2N6425
Manufacturer INCHANGE
File Size 216.08 KB
Description Silicon PNP Power Transistor
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Description

Collector-Emitter Breakdown Voltage- : VCEO=-300V(Min) Minimum Lot-to-Lot variations for robust device Performance and reliable operation APPLICATIONS Power amplifier and switching applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNI T VCBO Collector-Base Voltage -325 V VCEO Collector-Emitter Voltage -300 V VEBO Emitter-Base Voltage -6 V IC Collector Current-Continuous PD Collector Power Dissipation @ TC=25℃ TJ Junction Temperature -1 A

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