| Part number | 2N6425 |
|---|---|
| Datasheet | 2N6425-INCHANGE.pdf |
| File Size | 216.08 KB |
| Manufacturer | Inchange Semiconductor |
| Description | Silicon PNP Power Transistor |
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·Collector-Emitter Breakdown Voltage- : 1 isc & iscsemi is registered trademark isc Silicon PNP Power Transistor 2N6425 TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS V(BR)CEO Collector-Emitter Breakdown Voltage IC=-5mA IEBO Emitter -Base Cutoff Current VBE=- 6V ICEO Collector-Emitter Cutoff Current VCB=- 200V VCE(sat) Collector-Emitter Saturation Voltage IC= -0.25A; IB=-0.025A VBE(on) Base-Emitter On...
| Brand Logo | Part Number | Description | Other Manufacturers |
|---|---|---|---|
 |
2N6425 | PNP Silicon Power Transistor | Central Semiconductor |
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2N6425 | Bipolar PNP Device | Seme LAB |
See all Inchange Semiconductor datasheets
| Part Number | Description |
|---|---|
| 2N6422 | Silicon PNP Power Transistor |
| 2N6423 | Silicon PNP Power Transistor |
| 2N6405 | Thyristor |
| 2N6488 | NPN Transistor |
| 2N6492 | NPN Transistor |
| 2N6493 | NPN Transistor |
| 2N6494 | NPN Transistor |
| 2N6495 | NPN Transistor |
| 2N6497 | Silicon NPN Power Transistors |
| 2N6498 | Silicon NPN Power Transistors |
