2N6425 Silicon PNP Power Transistor

INCHANGE

Description

isc Silicon PNP Power Transistor .
Collector-Emitter Breakdown Voltage- : VCEO=-300V(Min). Minimum Lot-to-Lot variations for robust device Performance and reliable operation A.

📥 Download Datasheet

2N6425 Datasheet Preview — Preview of 2N6425 PDF

Datasheet Specifications

Part number: 2N6425
Manufacturer: INCHANGE
File Size: 216.08 KB
Datasheet: 2N6425-INCHANGE.pdf
Description: Silicon PNP Power Transistor

Applications

* Power amplifier and switching applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNI T VCBO Collector-Base Voltage -325 V VCEO Collector-Emitter Voltage -300 V VEBO Emitter-Base Voltage -6 V IC Collector Current-Continuous PD Collector Power Dissipation @ T

2N6425 Distributors

📁 Related Datasheet

2N6420 2N6421 2N6422 2N6423 2N6424 2N6426

📌 All Tags

2N6425 Silicon PNP Power Transistor INCHANGE

INCHANGE 2N6425-like datasheet