Datasheet Details
| Part number | 2N6425 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 216.08 KB |
| Description | Silicon PNP Power Transistor |
| Datasheet | 2N6425-INCHANGE.pdf |
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Overview: isc Silicon PNP Power Transistor.
| Part number | 2N6425 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 216.08 KB |
| Description | Silicon PNP Power Transistor |
| Datasheet | 2N6425-INCHANGE.pdf |
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·Collector-Emitter Breakdown Voltage- : VCEO=-300V(Min) ·Minimum Lot-to-Lot variations for robust device Performance and reliable operation APPLICATIONS ·Power amplifier and switching applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNI T VCBO Collector-Base Voltage -325 V VCEO Collector-Emitter Voltage -300 V VEBO Emitter-Base Voltage -6 V IC Collector Current-Continuous PD Collector Power Dissipation @ TC=25℃ TJ Junction Temperature -1 A 20 W -65~200 ℃ Tstg Storage Temperature Range -65~200 ℃ 2N6425 isc website： .iscsemi.
1 isc & iscsemi is registered trademark isc Silicon PNP Power Transistor 2N6425 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS V(BR)CEO Collector-Emitter Breakdown Voltage IC=-5mA IEBO Emitter -Base Cutoff Current VBE=- 6V ICEO Collector-Emitter Cutoff Current VCB=- 200V VCE(sat) Collector-Emitter Saturation Voltage IC= -0.25A;
IB=-0.025A VBE(on) Base-Emitter On Voltage IC= -0.1A;
| Brand Logo | Part Number | Description | Manufacturer |
|---|---|---|---|
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2N6425 | PNP Silicon Power Transistor | Central Semiconductor |
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2N6425 | Bipolar PNP Device | Seme LAB |
| Part Number | Description |
|---|---|
| 2N6422 | Silicon PNP Power Transistor |
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| 2N6492 | NPN Transistor |
| 2N6493 | NPN Transistor |
| 2N6494 | NPN Transistor |
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| 2N6497 | Silicon NPN Power Transistors |
| 2N6498 | Silicon NPN Power Transistors |