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2N6425 Silicon PNP Power Transistor

2N6425 Description

isc Silicon PNP Power Transistor .
Collector-Emitter Breakdown Voltage- : VCEO=-300V(Min). Minimum Lot-to-Lot variations for robust device Performance and reliable operation A.

2N6425 Applications

* Power amplifier and switching applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNI T VCBO Collector-Base Voltage -325 V VCEO Collector-Emitter Voltage -300 V VEBO Emitter-Base Voltage -6 V IC Collector Current-Continuous PD Collector Power Dissipation @ T

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Datasheet Details

Part number
2N6425
Manufacturer
INCHANGE
File Size
216.08 KB
Datasheet
2N6425-INCHANGE.pdf
Description
Silicon PNP Power Transistor

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Silicon PNP Power Transistor INCHANGE
INCHANGE 2N6425-like datasheet